advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 40v simple drive requirement r ds(on) 20m fast switching characteristic i d 32a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.5 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 200810282 thermal data parameter 1 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 20 pulsed drain current 1 120 storage temperature range total power dissipation 27.8 -55 to 150 gate-source voltage + 20 continuous drain current, v gs @ 10v 32 parameter rating drain-source voltage 40 AP9962AGP rohs-compliant product g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as dc/dc converters. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 20 m ? ? ,
ap9962ag p fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0 v 5.0 v 4.5 v . v g = 3.0 v 0 20 40 60 80 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g = 3.0 v t c =150 o c 14 18 22 26 30 246810 v gs gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9962AGP 0 2 4 6 8 10 12 0 4 8 1216202428 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =24v v ds =32v i d =20a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 200 400 600 800 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc
package outline : to-220 millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 2.54 ref. 7.4 ref, symbols advanced power electronics corp. 5.10 ref. e1 b b1 e d l4 l1 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 9962agp ywwsss logo l5 meet rohs requirement e d1 5
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